Infineon CY7C1049D-10VXIT, 4Mbit asynchronous SRAM, 512K x 8, 10 ns access time, 4.5V–5.5V supply, -40°C to 85°C, 36-SOJ, Tape & Reel.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 4.5V ~ 5.5V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tape & Reel (TR) |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 36-BSOJ (0.400\", 10.16mm Width) |
| Memory organization | 512K x 8 |
| Write cycle time - word, page | 10ns |
If your board is 3.3V, you need level translators on the address and data lines — or look at a 3.3V asynchronous SRAM like the CY7C1041DV33 series.
The 10 ns access time holds across that range, so timing closure at cold start or hot soak is the same as at 25°C.
Infineon lists the CY7C1049D-10VXIT as obsolete.
Infineon has not published an official direct replacement for this part. For a 5V 4Mbit asynchronous SRAM in a 36-SOJ package, the closest pin-compatible alternative is the CY7C1049D-10VXI (the tube version of the same die) — but that too is obsolete. For new designs, consider a 3.3V asynchronous SRAM like the CY7C1041DV33 series with level translation, or a 5V synchronous SRAM if the bus can tolerate the clock.
The access time is 10 ns, which means the part can complete a random read or write cycle in 10 ns — fast enough for 100 MHz bus interfaces with careful PCB layout and matched trace lengths.