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Infineon Technologies CY7C1041GN30-10BVJXIT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1041GN30-10BVJXIT SRAM, 4Mbit, 10 ns, 48-VFBGA

MPNCY7C1041GN30-10BVJXIT
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Infineon CY7C1041GN30-10BVJXIT, asynchronous SRAM, 4Mbit (256K x 16), 10 ns access time, parallel interface, 2.2V–3.6V supply, -40°C to 85°C, 48-VFBGA (6x8 mm), Tape & Reel.

$6.3525Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1041GN30-10BVJXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization256K x 16
Write cycle time - word, page10ns

Product details

For a 16-bit data path, that is 200 MB/s peak bandwidth — enough to feed a high-speed cache tag buffer or a networking FIFO without wait states.

4 Mbit in a 256K x 16 organization

Organized as 256K words of 16 bits each, this SRAM maps cleanly onto a 16-bit data bus without byte-lane packing.

The 48-VFBGA (6x8 mm) is a fine-pitch BGA with 0.75 mm ball pitch typical for this footprint. Will it survive the hot air? Yes — the package is small enough that rework with a preheater and a hot-air nozzle is feasible, but the 6x8 mm array means you need a stencil and a reflow profile, not a soldering iron. The surface-mount mounting is standard, but the BGA balls are hidden — X-ray inspection after reflow is the only way to confirm solder joints.

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