Skip to main content
Infineon Technologies CY7C1041GN-10VXIT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1041GN-10VXIT 4Mbit Async SRAM, 10 ns, 44-SOJ

MPNCY7C1041GN-10VXIT
Active

Infineon CY7C1041GN-10VXIT, 4Mbit (256K x 16) Asynchronous SRAM, 10 ns access time, 4.5V–5.5V supply, Parallel interface, -40°C to 85°C industrial temperature, 44-SOJ, Tape & Reel.

$6.2650Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1041GN-10VXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case44-BSOJ (0.400\", 10.16mm Width)
Memory organization256K x 16
Write cycle time - word, page10ns

Product details

10 ns access time — bus timing margin

The 10 ns access time and write cycle time allow back-to-back reads and writes at the same rate.

256K x 16 organization — word-wide bus fit

The 16-bit-wide data bus matches the native word width of 16-bit MCUs. The 4Mbit density (256K x 16) suits small-to-medium packet buffers or parameter storage.

Package and lifecycle reality

The part ships in a 44-pin SOJ package with a 0.400-inch body width. The lifecycle status is Active, meaning Infineon continues to manufacture this part.

Frequently asked questions

Is CY7C1041GN-10VXIT obsolete or still active?

The CY7C1041GN-10VXIT is Active in production — no end-of-life notice is recorded. It is sourced and quoted to order against an RFQ through independent distribution; availability and current pricing are confirmed at quote time.

What is the access time of CY7C1041GN-10VXIT?

The access time is 10 ns for both read and write cycles (word or page mode).