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Infineon Technologies CY7C1041GE30-10BVXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1041GE30-10BVXI Infineon 4Mbit Async SRAM, 10 ns

MPNCY7C1041GE30-10BVXI
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Infineon Technologies CY7C1041GE30-10BVXI asynchronous SRAM, 4Mbit (256K x 16), 10 ns access, 3V-3.6V, -40°C to 85°C, 48-VFBGA (6x8 mm), Tray.

$5.4168Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1041GE30-10BVXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization256K x 16
Write cycle time - word, page10ns

Product details

256K x 16 asynchronous SRAM with 10 ns access

The CY7C1041GE30-10BVXI is a 4 Mbit asynchronous SRAM organized as 256K words by 16 bits — the x16 data bus matches 16-bit microcontrollers and DSPs that need a single-chip data memory without byte-lane multiplexing. Industrial temperature range (-40°C to 85°C) qualifies the part for factory-floor controllers, outdoor telecom base stations, and automotive infotainment that does not require AEC-Q100 certification.

48-ball VFBGA — footprint and assembly

The 48-VFBGA package (6x8 mm body, 0.75 mm ball pitch) is a fine-pitch BGA that requires a controlled solder-paste stencil and X-ray inspection after reflow — the 0.5 mm ball diameter and 0.25 mm solder-mask-defined pad are standard for 4-layer boards. Because the package is a VFBGA (very fine-pitch BGA), the moisture sensitivity level (MSL) is typically 3 — bake before reflow if the floor life is exceeded, per J-STD-033.

Frequently asked questions

What is the memory organization and access time of CY7C1041GE30-10BVXI?

It is 4 Mbit organized as 256K x 16 with a 10 ns access time and 10 ns write cycle time — suitable for 16-bit bus applications up to 100 MHz.