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Infineon Technologies CY7C1041GE-10VXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1041GE-10VXI Infineon SRAM, 4Mbit 10 ns 44-SOJ

MPNCY7C1041GE-10VXI
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Infineon CY7C1041GE-10VXI, asynchronous SRAM, 4Mbit (256K x 16), 10 ns access time, parallel interface, 4.5V to 5.5V supply, -40°C to 85°C, 44-SOJ surface mount package, Tube.

$5.4000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1041GE-10VXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTube
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case44-BSOJ (0.400\", 10.16mm Width)
Memory organization256K x 16
Write cycle time - word, page10ns

Product details

In a 50 MHz bus environment, a 10 ns access leaves roughly 10 ns of setup margin after accounting for address propagation and output hold — enough for most FPGA or ASIC memory controllers without inserting wait states. If your controller expects a faster part (e.g., 8 ns), this part will not meet setup; if it expects 12 ns or slower, the 10 ns part provides headroom.

4Mbit density and 256K x 16 organization

The 256K x 16 organization is a standard x16 word width, common in 16-bit microcontroller and DSP memory buses. The 4Mbit density suits applications needing moderate scratchpad or frame buffers — think Ethernet packet buffers, motor control lookup tables, or display line stores. The parallel interface is straightforward to route; no serial protocol overhead or configuration registers.

Industrial temperature grade and 5V supply

If your design has moved to 3.3V, consider the CY7C1041GE30-10ZSXI (3.0V version) instead, but note the package and footprint change.

Frequently asked questions

Is CY7C1041GE-10VXI obsolete or nearing end-of-life?

No.

What is the access time of CY7C1041GE-10VXI?

The access time is 10 ns for both read and write cycles (word and page write cycle time also 10 ns).