Infineon CY7C1041G30-10ZSXE, asynchronous SRAM, 4Mbit (256K x 16), parallel interface, 10 ns access time, 2.2V to 3.6V supply, -40°C to 125°C, 44-TSOP II, Tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C~125°C(TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 10ns |
The CY7C1041G30-10ZSXE: The 10 ns write cycle time (word and page) matches the read access, so the bus timing is symmetrical for both operations.
Housed in a 44-TSOP II (0.400", 10.16 mm width) surface-mount package, this part uses the same footprint as many other 4Mbit asynchronous SRAMs from Infineon and legacy Cypress, making it a drop-in replacement for existing board layouts.
For a different package, the CY7C1041G30-10BAJXE offers the same specs in a BGA package.