Infineon Technologies CY7C1041G30-10BAJXET asynchronous SRAM, 4Mbit (256K x 16), 10 ns access time, 2.2V-3.6V supply, -40°C to +125°C, 48-TFBGA, Tape & Reel.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C~125°C(TA) |
| Package | Tape & Reel (TR) |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 48-TFBGA |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 10ns |
The CY7C1041G30-10BAJXET is a 4 Mbit asynchronous SRAM organized as 256K x 16 bits, with a 10 ns access time that sets the bus-cycle floor for the memory controller.
Housed in a 48-TFBGA (6x8 mm) package, the 0.5 mm ball pitch demands a 4-layer PCB for fan-out — two-layer boards will not route the inner balls cleanly. Supplied in Tape & Reel (TR) format, suitable for automated pick-and-place assembly.
Active. Infineon lists the lifecycle stage as current — no discontinuation notice has been issued.
Yes.
The suffix 'ET' vs 'IT' typically indicates packaging or temperature grade variant. Both share the same base part number CY7C1041 and the same 10 ns access time, 4 Mbit density, and 48-TFBGA package. The exact difference is in the ordering code — confirm the specific suffix with the datasheet's ordering information table.