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Infineon Technologies CY7C1041G18-15BVXIT — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1041G18-15BVXIT Infineon 4 Mbit Async SRAM 15 ns

MPNCY7C1041G18-15BVXIT
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Infineon CY7C1041G18-15BVXIT, asynchronous SRAM, 4 Mbit organized 256K x 16, 15 ns access time, parallel interface, 1.65 V–2.2 V supply, -40°C to 85°C, 48-VFBGA (6x8 mm), Tape & Reel.

$6.4575Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1041G18-15BVXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.65V ~ 2.2V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time15 ns
Memory size4Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization256K x 16
Write cycle time - word, page15ns

Product details

Asynchronous SRAM for low-latency data buffering

The CY7C1041G18-15BVXIT is a 4 Mbit asynchronous SRAM from Infineon, organized as 256K x 16 bits, with a 15 ns access time. The parallel interface and 15 ns cycle suit applications that need deterministic read/write latency without a clock — think cache tag storage, FIFO buffers, or configuration memory in base stations and industrial controllers.

Operating from 1.65 V to 2.2 V, this SRAM fits low-voltage core rails common in FPGAs and SoCs.

Housed in a 48-VFBGA (6x8 mm) package, the 0.75 mm ball pitch demands a 4-layer PCB for reliable fan-out — two-layer boards will struggle to route all 48 balls without vias.

This is a current-design-in part, not a last-time-buy candidate.

Frequently asked questions

Can CY7C1041G18-15BVXIT replace CY7C1041G18-15BVXI?

The CY7C1041G18-15BVXIT is the Tape & Reel variant of the CY7C1041G18-15BVXI. The die, package, and electrical specs are identical; the only difference is the delivery format. If your assembly line accepts Tape & Reel, it is a direct drop-in.