Infineon CY7C1041G18-15BVXI, asynchronous SRAM, 4Mbit (256K x 16), 15 ns access time, 1.65 V to 2.2 V supply, -40°C to 85°C, 48-VFBGA (6x8 mm) tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting type | Surface Mount |
| Voltage | 1.65V ~ 2.2V |
| Memory interface | Parallel |
| Operating temperature | -40°C~85°C(TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 15 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 48-VFBGA |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 15ns |
The Infineon CY7C1041G18-15BVXI is a 4 Mbit asynchronous SRAM organized as 256K x 16 bits, with a 15 ns access time. It operates from a 1.65 V to 2.2 V supply.
A 15 ns access time means the SRAM delivers valid data within 15 ns of the address being stable. For a 1.65 V to 2.2 V supply, that timing leaves slack for address decoding and trace delay.
It comes in a 48-VFBGA (6x8 mm) tray — a fine-pitch ball-grid array with 0.5 mm ball pitch, surface mount only.
It is an asynchronous SRAM, volatile memory, organized as 256K x 16 bits (4 Mbit total). The interface is parallel.
The part is RoHS-compliant (lead-free). Standard Infineon documentation includes the datasheet, PCN history, and RoHS/REACH declarations. Specific certificates are available on request with an RFQ.