Infineon CY7C1041CV33-12ZSXE asynchronous SRAM, 4 Mbit (256K x 16), 12 ns access time, 3.3 V supply, -40 to 125 °C, 44-TSOP II surface-mount tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 125°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 12 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 12ns |
The CY7C1041CV33-12ZSXE is a 4 Mbit asynchronous SRAM from Infineon, organized 256K x 16 and accessed in parallel. Its 12 ns access time means the part can serve data within a single 83 MHz clock cycle without wait states, which is the difference between a clean read and a bus stall on a fast 16-bit microcontroller or DSP.
Infineon lists this part as active.
It is organized as 256K words by 16 bits, giving a total of 4 Mbit.