Infineon Technologies CY7C1041BNV33L-12ZXC asynchronous SRAM, 4 Mbit (256K x 16), 12 ns access time, 3.3 V supply, 44-TSOP II, tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | 0°C ~ 70°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 12 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 12ns |
The CY7C1041BNV33L-12ZXC: Organised as 256K x 16 bits, this parallel-interface SRAM delivers a 12 ns access time and a matching 12 ns write cycle time — the bus speed ceiling for the memory controller is set by this figure, not the controller's own clock. Intended for indoor equipment such as networking gear, telecom line cards, and embedded controllers where the ambient stays within that band.
For a pin-compatible alternative in the same 44-TSOP II footprint, evaluate the ISSI IS61WV102416BLL (1 Mbit x 16, 3.3 V, 12 ns) — confirm the BOM position's density and timing requirements before substituting.
4 Mbit total, organised as 256K words by 16 bits. The parallel interface uses a 16-bit data bus.
12 ns access time and 12 ns write cycle time (word, page). This sets the minimum read/write cycle period for the memory controller.