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Infineon Technologies CY7C1024DV33-10BGXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1024DV33-10BGXI SRAM, 3Mbit, 10ns, 119-BGA

MPNCY7C1024DV33-10BGXI
Obsolete

Infineon Technologies CY7C1024DV33-10BGXI asynchronous SRAM, 3Mbit (128K x 24), 10 ns access time, 3V to 3.6V supply, -40°C to 85°C, 119-PBGA tray.

$16.7000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1024DV33-10BGXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size3Mbit
Memory formatSRAM
Case119-BGA
Memory organization128K x 24
Write cycle time - word, page10ns

Product details

3 Mbit asynchronous SRAM with 10 ns access

The CY7C1024DV33-10BGXI is a 3 Mbit asynchronous SRAM organized as 128K x 24 bits, with a parallel interface and a 10 ns access time that also applies to the write cycle (word or page).

Package and board-fit for the 119-PBGA

The tray packaging is typical for BGA devices; plan for moisture-sensitive level (MSL) handling — bake before reflow if the floor life has been exceeded to avoid popcorning.

Quantities are lot-specific; we source and quote to order against an RFQ.

Frequently asked questions

What is the memory size and organization of CY7C1024DV33-10BGXI?

It is a 3 Mbit asynchronous SRAM organized as 128K words by 24 bits.

What is the access time and supply voltage range?

Access time is 10 ns, and the supply voltage range is 3V to 3.6V.