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Infineon Technologies CY7C1021CV33-15ZSXAT — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1021CV33-15ZSXAT SRAM, 1Mbit Asynchronous, 15 ns

MPNCY7C1021CV33-15ZSXAT
Obsolete

Infineon CY7C1021CV33-15ZSXAT, 1Mbit asynchronous SRAM, 64K x 16 organization, 15 ns access time, parallel interface, 3V to 3.6V supply, -40°C to 85°C, 44-TSOP II package, Tape & Reel.

Infineon Technologies CY7C1021CV33-15ZSXAT datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1021CV33-15ZSXAT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time15 ns
Memory size1Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization64K x 16
Write cycle time - word, page15ns

Product details

The Infineon CY7C1021CV33-15ZSXAT is a 1Mbit asynchronous SRAM organized as 64K words by 16 bits, accessed through a parallel interface.

For a microcontroller or DSP with a 50 MHz external bus, the 15 ns window leaves about 5 ns of slack after address decode and data setup, which simplifies timing closure on a two-layer board without series termination.

Obsolete status and sourcing reality

Infineon lists the CY7C1021CV33-15ZSXAT as Obsolete. Sourcing is limited to the independent market — surplus inventory, broker networks, and verified stock from prior production runs.

Frequently asked questions

What is the memory organization of CY7C1021CV33-15ZSXAT?

The memory is organized as 64K words by 16 bits (64K x 16), giving a total of 1Mbit of volatile SRAM storage.