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Infineon Technologies CY7C1021CV33-12ZSXET — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1021CV33-12ZSXET 1Mbit Async SRAM, 12ns, -40 to 125°C

MPNCY7C1021CV33-12ZSXET
Obsolete

Cypress CY7C1021CV33-12ZSXET, 1Mbit (64K x 16) asynchronous SRAM, 12 ns access time, 3.0–3.6 V supply, parallel interface, -40°C to 125°C, 44-TSOP II, Tape & Reel.

$6.0100Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1021CV33-12ZSXET specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 125°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time12 ns
Memory size1Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization64K x 16
Write cycle time - word, page12ns

Product details

The Cypress CY7C1021CV33-12ZSXET is a 1Mbit (64K x 16) asynchronous SRAM organized as 64K words of 16 bits each, with a 12 ns access time that lets it interface directly with moderate-speed processors and DSPs without inserting wait states on a 50–66 MHz bus. The parallel interface and 3.0–3.6 V supply make it a drop-in fit for legacy 3.3 V memory buses in industrial controllers, telecom line cards, and embedded systems that need fast scratchpad or packet buffer memory.

Frequently asked questions

What is the replacement for CY7C1021CV33-12ZSXET?

Verify temperature requirements before substituting.