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Infineon Technologies CY7C1021CV33-10BAXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1021CV33-10BAXI SRAM, 1Mbit, 10 ns

MPNCY7C1021CV33-10BAXI
Obsolete

Infineon CY7C1021CV33-10BAXI, asynchronous SRAM, 1Mbit (64K x 16), 10 ns access time, 3V–3.6V supply, -40°C to 85°C, 48-TFBGA package, Tray.

$1.6000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1021CV33-10BAXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size1Mbit
Memory formatSRAM
Case48-TFBGA
Memory organization64K x 16
Write cycle time - word, page10ns

Product details

Infineon lists the CY7C1021CV33-10BAXI as Obsolete. For a BOM that requires this exact order code, the only channel is independent distribution — surplus inventory that was manufactured before the EOL cutoff. Sourcing through a broker that screens for date code freshness and counterfeit risk is the standard approach for this status.

1 Mbit organized 64K x 16 — bus width fit

Organised as 64K words of 16 bits, this SRAM connects directly to a 16-bit data bus without external muxing. The 1 Mbit density suits moderate-depth buffering, look-up tables, or scratchpad memory in embedded systems — not large frame buffers or deep FIFO applications.

No exposed thermal pad; all dissipation is through the BGA balls into the PCB copper.

Frequently asked questions

What is the closest pin-compatible alternative to CY7C1021CV33-10BAXI?

No official pin-compatible second source or direct successor is listed in the lifecycle record for this part. Sourcing is limited to the surplus channel.

What package does CY7C1021CV33-10BAXI come in?

It is supplied in a 48-TFBGA (7x7 mm) tray.

What technology is CY7C1021CV33-10BAXI?

It is an asynchronous SRAM with a parallel interface, organized 64K x 16.