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Infineon Technologies CY7C1021BNV33L-15BAI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1021BNV33L-15BAI SRAM, 1Mbit, 15ns, 48-TFBGA

MPNCY7C1021BNV33L-15BAI
Obsolete

Infineon Technologies CY7C1021BNV33L-15BAI asynchronous SRAM, 1Mbit (64K x 16), 15 ns access time, 3V–3.6V supply, industrial temperature -40°C to 85°C, 48-TFBGA package.

$1.0500Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1021BNV33L-15BAI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Asynchronous
Access time15 ns
Memory size1Mbit
Memory formatSRAM
Case48-TFBGA
Memory organization64K x 16
Write cycle time - word, page15ns

Product details

The CY7C1021BNV33L-15BAI: This is a 1 Mbit asynchronous SRAM organized as 64K words by 16 bits. The 15 ns access time sets the read-cycle ceiling for the bus — the processor must insert wait states if its memory controller cannot meet a 15 ns window. The write cycle time matches at 15 ns, so the part handles symmetric read/write traffic at the same speed. Supply voltage range is 3 V to 3.6 V — a 3.3 V nominal rail is the target. The part draws its operating current from this rail; no separate core or I/O supply is needed. The parallel memory interface ties directly to a 16-bit data bus and the matching address lines, so the pinout maps one-to-one with the processor's external memory controller.

The 48-TFBGA package with a 7x7 mm body is a fine-pitch BGA that requires a controlled solder profile and X-ray inspection for voiding under the balls. The 0.50 mm ball pitch is typical for this density; the PCB land pattern must match the supplier's recommended footprint to avoid head-in-pillow defects.

Frequently asked questions

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