Infineon CY7C1021BNV33L-10VXC, asynchronous SRAM, 1Mbit (64K x 16), 10 ns access time, parallel interface, 3 V to 3.6 V supply, 44-SOJ, 0°C to 70°C.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | 0°C ~ 70°C (TA) |
| Package | Tube |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 1Mbit |
| Memory format | SRAM |
| Case | 44-BSOJ (0.400\", 10.16mm Width) |
| Memory organization | 64K x 16 |
| Write cycle time - word, page | 10ns |
The CY7C1021BNV33L-10VXC is a 1 Mbit asynchronous SRAM from Infineon, organized as 64K words by 16 bits. Its 10 ns access time means the memory can complete a read or write cycle in 10 ns.
The 44-SOJ package (0.400" body width, 10.16 mm) uses J-leads, which are hand-serviceable with a soldering iron — no hot-air station required.
The part comes in a 44-SOJ surface-mount package (44-BSOJ, 0.400" body width, 10.16 mm).