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Infineon Technologies CY7C1021BN-12ZXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1021BN-12ZXC Infineon 1Mbit Async SRAM, 12 ns, 44-TSOP

MPNCY7C1021BN-12ZXC
Obsolete

Infineon CY7C1021BN-12ZXC, 1Mbit (64K x 16) Asynchronous SRAM, 12 ns Access Time, Parallel Interface, 4.5V ~ 5.5V Supply, 0°C ~ 70°C, 44-TSOP II, Tray.

$1.3900Ref. price · indicative, final on quote
Infineon Technologies CY7C1021BN-12ZXC datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1021BN-12ZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time12 ns
Memory size1Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization64K x 16
Write cycle time - word, page12ns

Product details

The Infineon CY7C1021BN-12ZXC is a 1Mbit asynchronous SRAM organized as 64K x 16, with a 12 ns access time that sets the bus-margin floor for a 5 V logic system. At 12 ns, it can keep up with a 33 MHz bus without wait states, assuming the controller's output-hold and setup windows are budgeted for a standard parallel SRAM interface.

Any buy should be qualified against the original Cypress datasheet for date-code consistency and traceability.

44-TSOP II footprint and handling

The supplier device package is 44-TSOP II, and the listed shipping medium is Tray.

Frequently asked questions

Can CY7C1021BN-12ZXC be replaced by a 3.3V SRAM?

Not as a direct drop-in. A 3.3 V SRAM would require a voltage-level translator on the address/data bus and a separate 3.3 V rail — the pinout may be compatible, but the supply and logic levels are different.