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Infineon Technologies CY7C1021BN-12VXC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1021BN-12VXC 1Mbit Async SRAM, 12 ns

MPNCY7C1021BN-12VXC
Obsolete

Cypress CY7C1021BN-12VXC, 1Mbit asynchronous SRAM, 64K × 16 organization, 12 ns access time, 4.5–5.5 V supply, 44-SOJ surface-mount package, 0–70 °C operating range.

Infineon Technologies CY7C1021BN-12VXC datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1021BN-12VXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTube
TechnologySRAM - Asynchronous
Access time12 ns
Memory size1Mbit
Memory formatSRAM
Case44-BSOJ (0.400\", 10.16mm Width)
Memory organization64K x 16
Write cycle time - word, page12ns

Product details

12 ns access — bus timing margin

The CY7C1021BN-12VXC: The 12 ns access time means the SRAM delivers data within 12 ns of the address being valid. The 64 K × 16 organization matches 16-bit MCUs and DSPs. Write cycle time matches read access at 12 ns.

This part is obsolete per Cypress. Sourcing is through surplus and broker channels.

5 V supply — legacy system consideration

The 44-SOJ package is a surface-mount, J-bend lead form — it reflows with standard profiles but the 0.400" body width is wider than a typical SOIC, so check the board footprint clearance.

Frequently asked questions

Can I replace CY7C1021BN-12VXC with a faster SRAM?

A faster asynchronous SRAM (e.g., 8 ns or 10 ns) in the same 44-SOJ package and 64 K × 16 organization could be a functional replacement, provided it operates at 5 V and meets your timing requirements. However, no official replacement is listed by Cypress. You would need to verify the pinout, supply range, and timing compatibility against your specific board layout and controller interface.