Infineon CY7C1021B-12VXI, asynchronous SRAM, 1Mbit (64K x 16), 12 ns access time, parallel interface, 4.5V–5.5V supply, -40°C to 85°C, 44-SOJ package, Tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 4.5V ~ 5.5V |
| Memory interface | Parallel |
| Operating temperature | -40°C~85°C(TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 12 ns |
| Memory size | 1Mbit |
| Memory format | SRAM |
| Case | 44-BSOJ (0.400\", 10.16mm Width) |
| Memory organization | 64K x 16 |
| Write cycle time - word, page | 12ns |
The Infineon CY7C1021B-12VXI is a 1Mbit asynchronous SRAM organized as 64K words by 16 bits. Its 12 ns access time covers both read and write cycles.
A 12 ns access time means the SRAM can complete a read or write within 12 ns of the address being valid.
Yes, Infineon lists the CY7C1021B-12VXI as Obsolete. No factory production remains; sourcing is through surplus or broker channels.
Infineon has not published an official successor for the CY7C1021B-12VXI. The CY7C1021BN-12VXI is a related variant in a different package — verify pin compatibility before substituting. For a drop-in replacement, check the 64K x 16 asynchronous SRAM family from ISSI or Alliance Memory in the same 44-SOJ footprint.
The access time is 12 ns for both read and write cycles.
The supply voltage range is 4.5V to 5.5V, making it a 5V-compatible part.
Yes, the supply range of 4.5V to 5.5V confirms 5V compatibility.