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Infineon Technologies CY7C10212CV33-12BAXE — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C10212CV33-12BAXE 1Mbit Async SRAM, 12 ns

MPNCY7C10212CV33-12BAXE
End of Life

Infineon CY7C10212CV33-12BAXE, asynchronous SRAM, 1Mbit (64K x 16), 12 ns access time, parallel interface, 3V to 3.6V supply, -40°C to 125°C, 48-TFBGA (7x7 mm), Tray.

$4.3000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C10212CV33-12BAXE specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 125°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time12 ns
Memory size1Mbit
Memory formatSRAM
Case48-TFBGA
Memory organization64K x 16
Write cycle time - word, page12ns

Product details

12 ns async SRAM for industrial cache and scratchpad

The 16-bit-wide word organization matches 16-bit MCU and FPGA buses directly, eliminating the need for external byte-lane multiplexing and simplifying the memory interface.

In a system with a 50 MHz bus clock (20 ns period), a 12 ns access leaves 8 ns of timing margin for address propagation, signal settling, and setup/hold before the next clock edge. That margin shrinks if the board has long trace runs or multiple loads on the data bus — the 12 ns rating gives the layout engineer a realistic budget for fanout and decoupling.

Frequently asked questions

What is the replacement or equivalent for CY7C10212CV33-12BAXE?

No direct pin-compatible replacement is listed in the official cross-reference. Verify pinout and footprint compatibility before substituting.

Is CY7C10212CV33-12BAXE RoHS compliant?

The part is listed as RoHS compliant. The 'E' suffix in the order code indicates lead-free and RoHS-compliant finish per Infineon's naming convention.