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Infineon Technologies CY7C1020D-10VXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1020D-10VXI Infineon 512Kbit Async SRAM, 10 ns

MPNCY7C1020D-10VXI
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Infineon CY7C1020D-10VXI, 512Kbit (32K x 16) Asynchronous SRAM, 10 ns Access Time, Parallel Interface, 4.5 V to 5.5 V Supply, -40°C to 85°C, 44-BSOJ Surface Mount Package, Tube.

$4.4800Ref. price · indicative, final on quote
Infineon Technologies CY7C1020D-10VXI datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1020D-10VXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTube
TechnologySRAM - Asynchronous
Access time10 ns
Memory size512Kbit
Memory formatSRAM
Case44-BSOJ (0.400\", 10.16mm Width)
Memory organization32K x 16
Write cycle time - word, page10ns

Product details

The CY7C1020D-10VXI: Access time is 10 ns; write cycle time matches at 10 ns.

Industrial temperature range — where it goes

The 44-SOJ package (0.400-inch body width, 10.16 mm) is a JEDEC-standard surface-mount footprint for mid-density SRAMs; it reflows with standard lead-free profiles and is compatible with visual inspection.

5 V supply — legacy bus or noise margin choice

The 32K x 16 organization gives a 16-bit wide data bus in a single package.

The base product number CY7C1020 covers multiple speed grades and temperature ranges; the -10VXI suffix specifically identifies the 10 ns industrial-temperature variant in the SOJ package.

Frequently asked questions

Is CY7C1020D-10VXI equivalent to CY7C1020D-15VXI?

The CY7C1020D-15VXI is the same 512Kbit asynchronous SRAM in the same 44-SOJ package and industrial temperature range, but with a 15 ns access time instead of 10 ns. It is pin-compatible and functionally identical — the trade-off is slower bus speed for potentially lower cost at volume. For a 10 ns bus requirement the -15VXI will not work; for a slower bus it is a direct drop-in.