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Infineon Technologies CY7C1020BN-12ZXCT — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1020BN-12ZXCT Infineon 512Kbit SRAM, 12 ns, Obsolete

MPNCY7C1020BN-12ZXCT
Obsolete

Infineon Technologies CY7C1020BN-12ZXCT, asynchronous SRAM, 512Kbit (32K x 16), 12 ns access, 4.5-5.5V, 0-70°C, 44-TSOP II, Tape & Reel.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1020BN-12ZXCT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time12 ns
Memory size512Kbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization32K x 16
Write cycle time - word, page12ns

Product details

512Kbit asynchronous SRAM — 12 ns access, 5V legacy bus

The CY7C1020BN-12ZXCT is a 512Kbit asynchronous SRAM organized as 32K x 16, with a 12 ns access time that matches the bus timing of legacy 5V CPLDs and microcontrollers still running at 33-50 MHz.

Package and board-fit — 44-TSOP II on tape and reel

Supplied in a 44-TSOP II package (0.400-inch body width, 10.16 mm) on Tape & Reel, surface-mount to the PCB with a standard JEDEC footprint. The TSOP II form factor is common in memory modules and embedded systems; the reel packaging suits automated pick-and-place for production runs.

Frequently asked questions

What is the memory organization of the CY7C1020BN-12ZXCT?

Organized as 32K words by 16 bits (32K x 16), giving 512Kbit total capacity. The parallel interface reads or writes a 16-bit word in a single 12 ns cycle.