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Infineon Technologies CY7C1019DV33-10BVXIT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1019DV33-10BVXIT SRAM, 1Mbit, 10 ns, 48-VFBGA

MPNCY7C1019DV33-10BVXIT
Active

Infineon CY7C1019DV33-10BVXIT, asynchronous SRAM, 1Mbit (128K x 8), 10 ns access time, parallel interface, 3V–3.6V supply, -40°C to 85°C, 48-VFBGA (6x8 mm), Tape & Reel.

$2.6150Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1019DV33-10BVXIT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size1Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization128K x 8
Write cycle time - word, page10ns

Product details

1 Mbit asynchronous SRAM in a 10 ns window

The CY7C1019DV33-10BVXIT: Parallel interface with 10 ns write cycle time (word, page). 48-VFBGA (6x8 mm) package.

Industrial temperature — deployment context

The 3V–3.6V supply rail aligns with common 3.3V logic families; no level translation needed when interfacing to a 3.3V FPGA or MCU memory controller.

Listed as Active.

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