10 ns asynchronous SRAM for the industrial bus
The CY7C1011G30-12ZSXE: It runs on a 2.2V to 3.6V supply rail, so it sits comfortably on a 3.3V or 2.5V logic plane.
10 ns access — no dead cycles on a 66 MHz bus
The 10 ns access time matches the spec.

Infineon CY7C1011G30-12ZSXE, asynchronous SRAM, 2Mbit (128K x 16), 10 ns access time, parallel interface, 2.2V–3.6V supply, -40°C to 125°C, 44-TSOP II package, Tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 125°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 2Mbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 128K x 16 |
| Write cycle time - word, page | 10ns |
The CY7C1011G30-12ZSXE: It runs on a 2.2V to 3.6V supply rail, so it sits comfortably on a 3.3V or 2.5V logic plane.
The 10 ns access time matches the spec.
The suffix difference (ZSXE vs ZSX) typically indicates a lead-free / ROHS-compliant variant. The ZSXE is the ROHS3 version; the ZSX was the earlier tin-lead finish. Electrically and mechanically they are identical — same 10 ns access, same 2 Mbit density, same 44-TSOP II footprint. If your assembly line is ROHS-compliant, the ZSXE is the direct replacement.
Lead time is confirmed at quote time through our independent distribution network. Because the part is active and widely stocked, typical lead times are manageable — submit an RFQ for current availability and pricing.