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Infineon Technologies CY7C1011G30-12ZSXE — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1011G30-12ZSXE SRAM 2Mbit Parallel 10 ns 44-TSOP II

MPNCY7C1011G30-12ZSXE
Active

Infineon CY7C1011G30-12ZSXE, asynchronous SRAM, 2Mbit (128K x 16), 10 ns access time, parallel interface, 2.2V–3.6V supply, -40°C to 125°C, 44-TSOP II package, Tray.

$9.6500Ref. price · indicative, final on quote
Packaging44-TSOP (0.400", 10.16mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1011G30-12ZSXE specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 125°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size2Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization128K x 16
Write cycle time - word, page10ns

Product details

10 ns asynchronous SRAM for the industrial bus

The CY7C1011G30-12ZSXE: It runs on a 2.2V to 3.6V supply rail, so it sits comfortably on a 3.3V or 2.5V logic plane.

10 ns access — no dead cycles on a 66 MHz bus

The 10 ns access time matches the spec.

Frequently asked questions

Can CY7C1011G30-12ZSXE replace CY7C1011G30-12ZSX?

The suffix difference (ZSXE vs ZSX) typically indicates a lead-free / ROHS-compliant variant. The ZSXE is the ROHS3 version; the ZSX was the earlier tin-lead finish. Electrically and mechanically they are identical — same 10 ns access, same 2 Mbit density, same 44-TSOP II footprint. If your assembly line is ROHS-compliant, the ZSXE is the direct replacement.

What is the lead time for CY7C1011G30-12ZSXE?

Lead time is confirmed at quote time through our independent distribution network. Because the part is active and widely stocked, typical lead times are manageable — submit an RFQ for current availability and pricing.