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Infineon Technologies CY7C1011G30-10ZSXAT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1011G30-10ZSXAT SRAM, 2Mbit, 10 ns, 44-TSOP II

MPNCY7C1011G30-10ZSXAT
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Infineon CY7C1011G30-10ZSXAT, asynchronous SRAM, 2Mbit (128K x 16), 10 ns access time, parallel interface, 2.2V–3.6V supply, -40°C to 85°C, 44-TSOP II, Tape & Reel.

$5.5354Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1011G30-10ZSXAT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size2Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization128K x 16
Write cycle time - word, page10ns

Product details

10 ns access time — bus margin in practice

The CY7C1011G30-10ZSXAT: The 10 ns access time governs how fast the memory can present data after the address is valid. Budget the trace delay and load capacitance on the data bus. Write cycle time is also 10 ns, so back-to-back writes at the same speed are possible without wait states, provided the controller meets the pulse-width requirements.

The 2.2V minimum supply also helps maintain data retention during brownout conditions down to that threshold.

Frequently asked questions

Does the CY7C1011G30-10ZSXAT have a replacement or equivalent part?

The base product number CY7C1011 covers multiple speed and temperature variants, but no direct drop-in alternate is specified.