Infineon Technologies asynchronous SRAM, CY7C1011G30-10BAJXET, 2Mbit, 128K x 16, 10 ns access, 2.2V to 3.6V, -40°C to 125°C, 48-TFBGA, Tape & Reel.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 125°C (TA) |
| Package | Tape & Reel (TR) |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 2Mbit |
| Memory format | SRAM |
| Case | 48-TFBGA |
| Memory organization | 128K x 16 |
| Write cycle time - word, page | 10ns |
The CY7C1011G30-10BAJXET: Housed in a 48-TFBGA (6x8 mm body) with surface-mount termination, the 0.5 mm ball pitch requires a 4-layer PCB for fan-out — the inner signal layers handle the 16-bit data bus routing while the outer layers carry the 2.2-3.6V supply and ground planes.
Submit an RFQ through this listing.
Organized as 128K x 16 bits (2Mbit total) with a 10 ns access time and 10 ns write cycle time, both at the full 2.2V to 3.6V supply range.