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Infineon Technologies CY7C1011CV33-10BAJXET — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1011CV33-10BAJXET SRAM, 2Mbit, 10 ns

MPNCY7C1011CV33-10BAJXET
End of Life

Infineon CY7C1011CV33-10BAJXET asynchronous SRAM, 2Mbit (128K x 16), 10 ns access time, parallel interface, 3V–3.6V supply, -40°C to 125°C, 48-TFBGA (6x8 mm), Tape & Reel.

$2.2200Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1011CV33-10BAJXET specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 125°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size2Mbit
Memory formatSRAM
Case48-TFBGA
Memory organization128K x 16
Write cycle time - word, page10ns

Product details

This is critical for real-time control loops and high-throughput data capture where deterministic latency matters.

Package and layout notes for the 48-TFBGA

Decoupling with 100 nF ceramic capacitors placed within 2 mm of each supply ball is recommended; the 3V–3.6V rail should be clean to within 100 mV ripple to avoid read/write corruption.

Active lifecycle — no end-of-life concerns for production planning

This allows qualification into new designs and long-run production without obsolescence risk.

Frequently asked questions

What is the difference between CY7C1011CV33-10BAJXET and CY7C1011CV33-10BAXI?

The suffix difference indicates packaging and temperature range. Verify the exact suffix against your BOM's temperature and handling requirements.