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Infineon Technologies CY7C1009D-10VXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1009D-10VXI Cypress 1 Mbit Async SRAM, 10 ns

MPNCY7C1009D-10VXI
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Cypress CY7C1009D-10VXI, 128K x 8 asynchronous SRAM, 10 ns access time, 4.5 V to 5.5 V supply, -40°C to 85°C, 32-SOJ surface-mount package, tube.

$4.3600Ref. price · indicative, final on quote
Infineon Technologies CY7C1009D-10VXI datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1009D-10VXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTube
TechnologySRAM - Asynchronous
Access time10 ns
Memory size1Mbit
Memory formatSRAM
Case32-BSOJ (0.300\", 7.62mm Width)
Memory organization128K x 8
Write cycle time - word, page10ns

Product details

For a 50 MHz bus, this part provides two full cycles of margin, which simplifies timing closure and reduces the risk of data corruption on the address/data lines.

The part ships in tube form, which is typical for prototype and low-volume builds; for higher volumes, the same die is available on tape and reel under a different order code.

For BOM resilience, the base product number CY7C1009 spans multiple speed grades and package options, but this exact -10VXI variant (10 ns, industrial temp, SOJ) is the one to qualify.

Frequently asked questions

What is the equivalent or replacement for CY7C1009D-10VXI?

There is no direct pin-compatible replacement listed in the Cypress family for this exact variant. The base product number CY7C1009 covers a range of speed grades and packages, but the -10VXI (10 ns, industrial, SOJ) is the specific configuration.