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Infineon Technologies CY7C09189V-6AXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C09189V-6AXC Dual-Port SRAM, 6.5 ns, 64K x 9

MPNCY7C09189V-6AXC
Obsolete

Infineon CY7C09189V-6AXC synchronous dual-port SRAM, 576Kbit (64K x 9), 6.5 ns access time, 100 MHz clock, 3.0–3.6 V supply, 100-TQFP (14x14), commercial temperature 0°C to 70°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C09189V-6AXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Clock frequency100 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Dual Port, Synchronous
Access time6.5 ns
Memory size576Kbit
Memory formatSRAM
Case100-LQFP
Memory organization64K x 9

Product details

576Kbit synchronous dual-port SRAM — 6.5 ns access time, 100 MHz clock

The Infineon CY7C09189V-6AXC is a 576Kbit synchronous dual-port SRAM organized as 64K x 9 bits, with a 6.5 ns access time and a 100 MHz clock. The x9 organization provides eight data bits plus a parity bit per word, useful for error-detection schemes in shared-memory designs. The 6.5 ns access time at 100 MHz clock means the part can sustain back-to-back read/write cycles with minimal dead cycles on the bus. For a dual-port SRAM used as a mailbox or FIFO buffer between two clock domains, this timing margin is the critical parameter — it determines whether the bus interface can close timing without wait states.

Frequently asked questions

What is the difference between CY7C09189V-6AXC and CY7C09189V-6AXI?

Both share the same 6.5 ns access time, 100 MHz clock, 64K x 9 organization, and 100-TQFP package.