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Infineon Technologies CY7C028V-25AXCT — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C028V-25AXCT 1Mbit Dual-Port SRAM, 25 ns

MPNCY7C028V-25AXCT
Obsolete

Cypress CY7C028V-25AXCT, 1Mbit dual-port asynchronous SRAM, 64K x 16 organization, 25 ns access time, parallel interface, 3V to 3.6V supply, 100-TQFP (14x14), 0°C to 70°C.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C028V-25AXCT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Dual Port, Asynchronous
Access time25 ns
Memory size1Mbit
Memory formatSRAM
Case100-LQFP
Memory organization64K x 16
Write cycle time - word, page25ns

Product details

The Cypress CY7C028V-25AXCT is a 1 Mbit dual-port asynchronous SRAM organized as 64K x 16 bits. It provides two independent ports with separate address, data, and control lines, allowing two bus masters — such as a DSP and an MCU, or two processors — to access the same memory array simultaneously. The 25 ns access time sets the bus timing window for arbitration-free reads and writes from either port.

This is fast enough to work with most 33 MHz to 40 MHz bus masters without wait states, provided the controller's address-to-data setup requirement is met. If the host controller runs above 40 MHz, you will need to budget for wait states or look at a faster dual-port SRAM.

Frequently asked questions

What is the access time of CY7C028V-25AXCT?

The access time is 25 ns for both read and write cycles from either port.

What are the alternatives to CY7C028V-25AXCT?

No official second source or pin-compatible replacement is documented for this specific order code. For a new design, consider current-production dual-port SRAMs from Cypress/Infineon or other vendors with similar 64K x 16 organization and 3.3V supply. Verify pin compatibility and timing against your specific bus controller before substituting.