8 Mbit MoBL SRAM with 70 ns access at 2.2 V
The Infineon CY62158DV30LL-70ZSXI is an 8 Mbit (1 M x 8) parallel SRAM from the MoBL (More Battery Life) series, designed for low-power operation in battery-backed and portable systems. It delivers a 70 ns access time from a 2.2 V supply, making it a fit for applications where standby current and board space are constrained.
The 70 ns access time sets the read-cycle window for the memory bus. At 2.2 V, that is the figure to use in timing closure against the processor's SRAM controller. If the host MCU runs at 48 MHz or slower, the 70 ns window leaves enough margin for address decode and data setup without wait states.
2.2 V supply and the MoBL advantage
Rated for a 2.2 V supply, this SRAM operates from a single lithium cell or a 2.5 V rail with margin. The MoBL series targets battery-backed SRAM applications where every microamp matters — the active current at 70 ns is lower than a standard 3.3 V SRAM at the same speed grade. For designs that hold a backup battery on the SRAM supply, the 2.2 V minimum reduces the boost-converter overhead.
Industrial temperature and surface-mount package
No special bake or handling beyond MSL 3 is required if the moisture-barrier bag is intact.
For dual-sourcing or higher-density requirements, the CY7C1061G30 family (16 Mbit, 10 ns) is a pin-compatible step up in density and speed, but at a different supply-voltage corner — verify the 2.2 V compatibility against your rail.