8 Mbit parallel SRAM — 55 ns access, 2.2 V, industrial temp
The Infineon CY62158DV30LL-55BVI is an 8 Mbit asynchronous SRAM organized as 1M x 8, with a 55 ns access time that sets the maximum read/write cycle rate for the memory bus.
MoBL® low-power series — standby and active current profile
The MoBL® designation signals a low-power SRAM architecture — the device draws minimal standby current when deselected, making it suitable for battery-backed or power-sensitive applications where the memory must retain data through sleep states.