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Infineon Technologies CY62147GE30-45BVXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY62147GE30-45BVXI 4Mbit SRAM, 45 ns, 256Kx16

MPNCY62147GE30-45BVXI
Active

Infineon Technologies MoBL® SRAM, 4Mbit, Parallel, 256K x 16, 45 ns, 2.2 V, 48VFBGA, -40°C to 85°C, Bulk.

$5.38Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY62147GE30-45BVXI specifications
ParameterValue
SeriesMoBL®
InterfaceParallel
MountingSurface Mount
Operating temperature high-40°C to 85°C (TA)
Frame_size4Mbit
Access time45 ns
Memory typeVolatile
Package_typeBulk
Memory formatSRAM
StatusActive
Supply voltage2.2
Memory organization256K x 16
Write cycle time - word, page45ns

Product details

4 Mbit parallel SRAM for industrial memory maps

The Infineon CY62147GE30-45BVXI is a 4 Mbit parallel SRAM organised as 256K words by 16 bits, part of the MoBL (More Battery Life) series that prioritises low standby power for battery-backed or portable systems. With a 45 ns access time and matching 45 ns write cycle time, this part fits bus architectures where the memory controller can tolerate a half-dozen wait states on a 100 MHz bus — think microcontroller-based data loggers, industrial HMIs, or FPGA configuration stores that do not need the fastest page-mode burst.

Supplied in bulk (tray) packaging; for high-volume reflow, plan a tray-to-tape conversion step or order the tape-and-reel variant if available from the same MoBL family.

Frequently asked questions

How does CY62147GE30-45BVXI compare to the CY7C1041GN30-10BVXI?

Both are 4 Mbit (256K x 16) parallel SRAMs at 2.2 V in the same 48VFBGA package and industrial temperature range. The key difference is speed: the CY7C1041GN30-10BVXI runs at 10 ns access, while this part is 45 ns. The 45 ns part is the cost-optimised choice for designs where the bus timing budget is relaxed — no need to pay for 10 ns performance if the controller's wait-state generator can handle 45 ns.