4 Mbit parallel SRAM for embedded buffering
The Infineon CY62147EV30LL-45ZSXI is a 4 Mbit asynchronous SRAM organized as 256K x 16 bits, part of the MoBL (More Battery Life) series optimized for low standby current in battery-backed or power-sensitive systems. With a 45 ns access time and a 45 ns write cycle time, this parallel-memory IC keeps read latency predictable for 16-bit microcontrollers or DSPs that need a fast scratchpad or frame buffer without DRAM refresh overhead.
Supply and temperature grade
Rated for a 2.2 V supply rail, the part draws less power than a 3.3 V equivalent at the same speed grade — useful for portable instruments or single-cell Li-ion designs where every milliwatt counts.