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Infineon Technologies CY62147DV30LL-55BVIT — Memory (DRAM / SRAM / Flash / EEPROM)

CY62147DV30LL-55BVIT 4Mbit SRAM, 55 ns, 48-VFBGA

MPNCY62147DV30LL-55BVIT
Active

Infineon Technologies MoBL® SRAM, 4Mbit, 256K x 16, Parallel interface, 55 ns access, 2.2 V supply, -40°C to 85°C, 48-VFBGA, Bulk.

$2.38Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY62147DV30LL-55BVIT specifications
ParameterValue
SeriesMoBL®
InterfaceParallel
MountingSurface Mount
Operating temperature high-40°C to 85°C (TA)
Frame_size4Mbit
Access time55 ns
Memory typeVolatile
Package_typeBulk
Memory formatSRAM
StatusActive
Supply voltage2.2
Memory organization256K x 16
Write cycle time - word, page55ns

Product details

48-VFBGA footprint and integration

The CY62147DV30LL-55BVIT: The 48-ball VFBGA package (0.50 mm pitch) demands a 4-layer PCB for fan-out — the inner rows of balls require micro-vias or blind vias to escape the BGA footprint. Decoupling capacitors should sit within 3 mm of each VDD ball pair; the 2.2 V supply rail must stay within ±5 % at the balls during a 55 ns read cycle.

55 ns access and 256K x 16 organization

The 55 ns access time sets the read-cycle ceiling — the processor must insert wait states if its bus clock period is shorter than the sum of access time plus board trace delay. Organised as 256K words of 16 bits each, the parallel interface consumes 16 data lines plus 18 address lines — a 34-signal bus that must be matched for skew within 2 ns across the PCB.

Frequently asked questions

How does CY62147DV30LL-55BVIT compare to the CY7C1041GN30-10BVXI?

The CY7C1041GN30-10BVXI offers a 10 ns access time versus this part's 55 ns — a 45 ns speed advantage for high-throughput cache or FIFO applications. The trade-off is higher active current at the faster speed grade.