4 Mbit parallel SRAM — 70 ns access, 2.2 V rail
The Cypress CY62147DV30L-70ZSXI is a 4 Mbit (256K x 16) parallel SRAM from the MoBL® series, organized as 256K words by 16 bits. It runs from a 2.2 V supply and delivers a 70 ns access time, making it a fit for 16-bit MCU buses or dual-byte buffers where the processor clock is under 14 MHz or wait states are acceptable. The 70 ns write cycle time matches the read cycle, so back-to-back transactions run at the same bus pace — no asymmetry to budget for.
70 ns access — where it fits the bus
A 70 ns access time means the SRAM can complete a read cycle in 70 ns from address assertion. For a 16-bit MCU running at 12 MHz (83 ns cycle), this part can keep up without wait states if the bus timing margin holds. At 16 MHz (62.5 ns cycle), one wait state is needed. The 70 ns write cycle time is the same, so mixed read/write sequences don't need extra dead cycles. This matters for designs where the CPU is already chosen and the memory interface is the bottleneck — the 70 ns rating tells you the maximum bus speed this part supports without stretching the cycle.
2.2 V supply — low-power rail compatibility
The 2.2 V supply voltage aligns with low-power MCU families that run on 1.8 V to 3.3 V rails. In a mixed-voltage system, the SRAM can share the same 2.2 V or 2.5 V rail as the core logic, avoiding a separate regulator. The MoBL® series is optimized for low standby current, so this part suits battery-backed or always-on memory applications where every microamp counts. No level shifters are needed when the host MCU also operates at 2.2 V.