Memory density and access timing
The CY62147CV30LL-70BVI is a 4Mbit asynchronous SRAM organised as 256K words by 16 bits, with a 70 ns access time from address valid to data valid. The 70 ns cycle time sets the bus bandwidth ceiling — at a 70 ns read cycle the peak throughput is roughly 14.3 million 16-bit words per second, which is the practical limit for a parallel memory bus without wait states. The write cycle time is also 70 ns for a word write, and the page-mode write allows faster sequential writes within the same row. This part belongs to the MoBL® (More Battery Life) series, which targets low-power standby and active operation for battery-backed or portable applications.
Supply voltage and temperature grade
The 48-VFBGA package (6x8 mm body) with a 0.75 mm ball pitch requires a 4-layer PCB for fan-out of the 48 balls; the centre ground pad should be stitched to the ground plane with at least four vias to keep the thermal resistance low. The part is RoHS non-compliant (lead-bearing solder balls), so it is not suitable for RoHS-mandated production without an exemption.
Active lifecycle and sourcing
The parallel asynchronous SRAM market has few direct cross-shoppers — if a second source is required, the BOM should be qualified against another MoBL® density or a different package variant from the same family.