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Infineon Technologies CY10E484-4DC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY10E484-4DC SRAM 16Kbit Parallel 4 ns 28CDIP

MPNCY10E484-4DC
End of Life

Cypress CY10E484-4DC, 16Kbit volatile parallel SRAM, 4K x 4 organization, 4 ns access time, 4.94 V supply, 28-pin CERDIP through-hole package, 0°C to 75°C ambient.

$84.00Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY10E484-4DC specifications
ParameterValue
InterfaceParallel
MountingThrough Hole
Operating temperature high0°C to 75°C(TA)
Frame_size16Kbit
Access time4 ns
Memory typeVolatile
Package_typeBulk
Memory formatSRAM
Supply voltage4.94
Memory organization4K x 4
Write cycle time - word, page4ns

Product details

The CY10E484-4DC: 16Kbit volatile SRAM organized as 4K x 4 bits, accessed through a parallel interface. 4 ns access time, 4.94 V supply, 28-pin CERDIP through-hole package, 0°C to 75°C ambient.

28-pin CERDIP through-hole package. Bulk delivery in anti-static tubes.

Frequently asked questions

What is the closest functional second-source for CY10E484-4DC?

The CYD18S18V18-167BBAXC is a higher-density 18 Mbit SRAM with the same 4 ns access time, but it runs on 1.42 V in a surface-mount BGA package — not a pin-compatible drop-in. For a true through-hole replacement, no direct second-source is listed.

Will CY10E484-4DC drop into a panel specified around CYD18S18V18-167BBAXC?

No. The CY10E484-4DC uses a 28-pin CERDIP through-hole package and 4.94 V supply; the CYD18S18V18-167BBAXC is a surface-mount BGA at 1.42 V. Different footprint, different voltage rail — rewiring and a board respin would be required.