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Infineon Technologies BTS5210GXUMA1 — Power Management (PMIC / Gate Driver)

Infineon BTS5210GXUMA1 High-Side Power Switch, 110 mOhm

MPNBTS5210GXUMA1
Active

Infineon BTS5210GXUMA1 dual high-side power switch, 110 mOhm typical Rds(on), 1.8 A max per channel, 5.5 V to 40 V load supply, N-channel output, On/Off interface, non-inverting input, 14-SOIC package, -40 °C to 150 °C junction temperature.

$2.7800Ref. price · indicative, final on quote
Infineon Technologies BTS5210GXUMA1 datasheet (PDF)
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BTS5210GXUMA1 specifications
ParameterValue
Input typeNon-Inverting
Output typeN-Channel
TypeGeneral Purpose
MountingSurface Mount
Voltage - load5.5V ~ 40V
Voltage - supply (Vcc (Vdd))Not Required
Output current1.8A
I/O channels2
InterfaceOn/Off
Operating temperature-40°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Rds on110mOhm
Case14-SOIC (0.154\", 3.90mm Width)
Fault protectionCurrent Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Output configurationHigh Side
Ratio - Input:Output1:1

Product details

Dual high-side switch with integrated protection

The Infineon BTS5210GXUMA1 is a dual-channel high-side power switch in a 14-SOIC package, designed to replace a discrete MOSFET plus driver and external protection components. Each N-channel output delivers up to 1.8 A continuous, with a typical on-resistance of 110 mOhm per channel. The load supply range spans 5.5 V to 40 V, covering 12 V and 24 V industrial and automotive buses with headroom for load-dump transients. No external Vcc supply is needed — the switch is self-powered from the load rail.

Junction temperature and automotive fit

The 150 °C TJ ceiling is typical of AEC-Q100 Grade 0 devices, though no AEC-Q grade is explicitly cited in this listing. The 14-SOIC package (PG-DSO-14-37) has a moderate thermal mass — expect to pour a copper plane under the exposed pad if both channels run near 1.8 A simultaneously. The 110 mOhm Rds(on) at 25 °C rises with junction temperature; budget for ~180 mOhm at 150 °C TJ when sizing the load current.

No stock-holding claim is made; the supply posture is per-RFQ.

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