Active production — a current-generation power MOSFET for 120 V rails
The BSC080N12LSGATMA1 is an active-production N-channel MOSFET from Infineon's OptiMOS™ series, meaning it remains a viable choice for new designs and ongoing production without last-time-buy risk. Rated for a drain-to-source voltage of 120 V and a continuous drain current of 99 A at the case (Tc), this part suits 48 V, 60 V, and 80 V bus architectures with healthy derating margin.
8 mOhm Rds(on) at 10 V gate drive — the conduction-loss anchor
The maximum on-resistance is 8 mOhm at 50 A drain current with 10 V gate drive — this sets the conduction loss floor for a synchronous buck or OR-ing application. At 50 A, the dissipation is 20 W (I²R), which must be managed by the thermal path through the PG-TDSON-8 package's exposed pad. Gate charge is 79 nC typical at 10 V, and input capacitance (Ciss) is 7400 pF at 60 V Vds — these numbers define the gate-driver current requirement and switching losses. A driver sourcing 2 A can charge the gate in roughly 40 ns, but the Miller plateau region dominates the switching transition.
PG-TDSON-8 footprint — surface-mount power density
Housed in a PG-TDSON-8 (8-PowerTDFN) package, this MOSFET is a surface-mount device with an exposed drain pad for thermal dissipation. The 156 W power dissipation rating at the case assumes adequate PCB copper area and thermal vias under the pad — a four-layer board with a 2 oz inner plane is typical for designs pushing 50 A continuous. The operating junction temperature range of -55°C to 150°C covers automotive under-hood and industrial ambient conditions, though the 99 A continuous rating at Tc drops significantly as ambient temperature rises — derate per the datasheet's thermal impedance curve.