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Infineon Technologies BFR380FH6327XTSA1 — Memory (DRAM / SRAM / Flash / EEPROM)

BFR380FH6327XTSA1 RF NPN Transistor, 14 GHz, SOT-723

MPNBFR380FH6327XTSA1
End of Life

Infineon BFR380FH6327XTSA1 RF NPN transistor, 9 V Vceo, 80 mA Ic, 14 GHz fT, 9.5-13.5 dB gain, 1.1-1.6 dB NF, SOT-723 / PG-TSFP-3 package, ROHS3.

$0.44Ref. price · indicative, final on quote
PackagingSOT-723
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

BFR380FH6327XTSA1 specifications
ParameterValue
MountingSurface Mount
FET typeNPN
Voltage - collector emitter breakdown9V
Current - collector (Ic)80mA
DC current gain (hFE) (Min) @ ic, vce90 @ 40mA, 3V
Power - max380mW
Frequency - transition14GHz
Operating temperature150°C (TJ)
Gain9.5dB ~ 13.5dB
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOT-723
Noise figure (dB typ @ f)1.1dB ~ 1.6dB @ 1.8GHz ~ 3GHz

Product details

14 GHz fT, 1.1 dB NF — L-band and S-band LNA core

The BFR380FH6327XTSA1 is an NPN RF transistor with a 14 GHz transition frequency, placing it squarely in the small-signal gain stage for L-band (1-2 GHz) and S-band (2-4 GHz) receiver front-ends. The 1.1 dB typical noise figure at 1.8 GHz sets the cascaded noise floor for the first LNA stage — every 0.1 dB here directly adds to the system noise figure. Gain spans 9.5 dB to 13.5 dB across the band, so the cascade budget for a two-stage LNA starts with at least 19 dB of block gain before mixer conversion loss. The 9 V collector-emitter breakdown and 80 mA maximum collector current bound the operating region to small-signal levels — this is not a driver or power stage.

PG-TSFP-3 footprint and thermal budget

Housed in the PG-TSFP-3 package (SOT-723 variant), the transistor occupies a 1.2 mm × 1.2 mm footprint with three leads — collector, base, emitter. The surface-mount assembly suits compact RF modules where board area is at a premium, but the 380 mW maximum power dissipation means the copper pad area under the collector tab must be sized to keep the junction below 150°C in the target ambient. DC current gain is guaranteed at 90 minimum when biased at 40 mA collector current and 3 V Vce — this hFE floor lets the bias network be designed for a known beta range, avoiding saturation or cutoff drift over temperature.

Active lifecycle, ROHS3 compliance

The BFR380FH6327XTSA1 carries an active product status, supporting ongoing design-in and production builds. ROHS3 compliance covers the EU RoHS exemption list through 2024, so the part clears global regulatory acceptance without a waiver.

Frequently asked questions

What is the noise figure of BFR380FH6327XTSA1 at 1.8 GHz?

The typical noise figure is 1.1 dB at 1.8 GHz, rising to 1.6 dB at 3 GHz. This sets the receiver sensitivity floor for L-band and lower S-band LNA stages.

What package does BFR380FH6327XTSA1 use?

It is supplied in the PG-TSFP-3 package, which is the Infineon designation for a SOT-723 surface-mount package. Available in Tape & Reel or Cut Tape options.