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Goford SemiconductorDiscrete Semiconductors

Goford Semiconductor Discrete Semiconductors — 4 part numbers with specifications and datasheets. Filter by key specs and request a quote on ICBOMS.

Current - Continuous Drain (Id) @ 25°C
110A (Tc) · 23A · 4.2A · 2A (Tc)
Power Dissipation (Max)
160W (Tc) · 38W · 1.2W · 1.8W (Tc)
Rds On (Max) @ Id, Vgs
6.4mOhm @ 4A, 10V · 35mOhm @ 20A, 10V · 60mOhm @ 2A, 10V · 700mOhm @ 1A, 10V
Supplier Device Package
TO-252 · TO-252 (DPAK) · SOT-23-3 · SOT-23-6L
Drain to Source Voltage (Vdss)
60 V · 30 V · 200 V
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 10 V · 8.5 nC @ 4.5 V · 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
590 pF @ 15 V · 880 pF @ 15 V · 577 pF @ 100 V
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63 · TO-236-3, SC-59, SOT-23-3 · SOT-23-6

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