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FDD5N50TM

Fairchild Semiconductor FDD5N50TM

MPNFDD5N50TM
Active

4A, 500V, 1.4OHM, N-CHANNEL POWE

$0.3000Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
SeriesPowerTrench®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

FDD5N50TM specifications
ParameterValue
SeriesPowerTrench®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C4A (Tc)
Power dissipation40W (Tc)
Operating temperature-55°C~150°C(TJ)
PackageBulk
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id5V @ 250µA
Rds on (Max) @ id, vgs1.4Ohm @ 2A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds640 pF @ 25 V