EPC2111
MPNEPC2111
Active
GANFET 2N-CH 30V 16A DIE
$3.24Ref. price · indicative, final on quote
PackagingDie
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Drain to source voltage | 30V |
| Current - continuous drain (Id) @ 25°C | 16A (Ta) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel (Half Bridge) |
| Case | Die |
| Vgs(th) (Max) @ id | 2.5V @ 5mA |
| Rds on (Max) @ id, vgs | 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V |
| Gate charge (Qg) (Max) @ vgs | 2.2nC @ 5V, 5.7nC @ 5V |
| Input capacitance (Ciss) (Max) @ vds | 230pF @ 15V, 590pF @ 15V |