EPC2107
MPNEPC2107
Active
GANFET 3 N-CH 100V 9BGA
$2.03Ref. price · indicative, final on quote
Packaging9-VFBGA
RoHSROHS3 Compliant
SerieseGaN®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | eGaN® |
| Mounting | Surface Mount |
| Drain to source voltage | 100V |
| Current - continuous drain (Id) @ 25°C | 1.7A, 500mA |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| Case | 9-VFBGA |
| Vgs(th) (Max) @ id | 2.5V @ 100µA, 2.5V @ 20µA |
| Rds on (Max) @ id, vgs | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V |
| Gate charge (Qg) (Max) @ vgs | 0.16nC @ 5V, 0.044nC @ 5V |
| Input capacitance (Ciss) (Max) @ vds | 16pF @ 50V, 7pF @ 50V |