EPC2023
MPNEPC2023
Active
GANFET N-CH 30V 60A DIE
$7.25Ref. price · indicative, final on quote
PackagingDie
RoHSROHS3 Compliant
SerieseGaN®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | eGaN® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Current - continuous drain (Id) @ 25°C | 60A (Ta) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | GaNFET (Gallium Nitride) |
| Case | Die |
| Vgs(th) (Max) @ id | 2.5V @ 20mA |
| Rds on (Max) @ id, vgs | 1.3mOhm @ 40A, 5V |
| Input capacitance (Ciss) (Max) @ vds | 2300 pF @ 15 V |