EPC2012C
MPNEPC2012C
Active
GANFET N-CH 200V 5A DIE OUTLINE
$2.76Ref. price · indicative, final on quote
PackagingDie
RoHSROHS3 Compliant
SerieseGaN®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | eGaN® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 200 V |
| Drive voltage (Max rds on, min rds on) | 5V |
| Current - continuous drain (Id) @ 25°C | 5A (Ta) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | +6V, -4V |
| Technology | GaNFET (Gallium Nitride) |
| Case | Die |
| Vgs(th) (Max) @ id | 2.5V @ 1mA |
| Rds on (Max) @ id, vgs | 100mOhm @ 3A, 5V |
| Gate charge (Qg) (Max) @ vgs | 1.3 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 140 pF @ 100 V |