EPC2012C — DC-DC Power Modules
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EPC / DC-DC Power Modules

EPC2012C - EPC

MPN EPC2012C
Active Spot Stock · 24-48h Dispatch 100% Original Sealed

GANFET N-CH 200V 5A DIE OUTLINE

In Stock: 16 pcs
MOQ: 1 pcs
Logistics: DHL / FedEx DAP (Global Express · 3-7d) Russia & CIS DDP (Door-to-Door Cleared)
Dispatch: Shenzhen / HK
Unit Price (USD)
$3.63 / pc
Direct Purchase Ready
Volume Pricing Breaks Confirmed upon quotation
1+ pcs
$3.63
10+ pcs
$3.55
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$3.63 / ea

16 in stock — maximum per order · 3–4 days lead time

$3.55 / ea from 10 pcs

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[SPEC] Essential Parameters Snapshot Full Specifications (15)
Package / Case Die
Output / Current 200 V

Full Technical Specifications

15 Parameters
EPC2012C specifications
Parameter / AttributeSpecification / Value
SerieseGaN®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage200 V
Drive voltage (Max rds on, min rds on)5V
Current - continuous drain (Id) @ 25°C5A (Ta)
Operating temperature-40°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs+6V, -4V
TechnologyGaNFET (Gallium Nitride)
CaseDie
Vgs(th) (Max) @ id2.5V @ 1mA
Rds on (Max) @ id, vgs100mOhm @ 3A, 5V
Gate charge (Qg) (Max) @ vgs1.3 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds140 pF @ 100 V
Series Sibling Variants

EPC eGaN® Series Models

Sibling variants, package options, and speed/density grades in this EPC semiconductor series. Active Shenzhen warehouse allocation and rapid 24-48h dispatch.

EPC2012C
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