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Yangzhou Yangjie Electronic Technology Co.,Ltd 1N4448W — Discrete Semiconductors

Yangzhou Yangjie Electronic Technology Co.,Ltd 1N4448W

MPN1N4448W
Obsolete

DIODE GEN PURP 100V 250MA SOD123

$0.1800Ref. price · indicative, final on quote
PackagingSOD-123
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N4448W specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1 V @ 100 mA
Current - reverse leakage @ vr200 nA @ 75 V
Current - average rectified250mA
Operating temperature - junction-55°C~150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseSOD-123
Capacitance @ vr,4pF @ 0V, 1MHz
Reverse recovery time4 ns