C3M0045065D
Wolfspeed, Inc. · C3M™ Series
GEN 3 650V 45 M SIC MOSFET
[IN STOCK] In Stock: 15 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | C3M™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 15V |
| Current - continuous drain (Id) @ 25°C | 49A (Tc) |
| Power dissipation | 176W (Tc) |
| Operating temperature | -40°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | +19V, -8V |
| Technology | SiCFET (Silicon Carbide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.6V @ 4.84mA |
| Rds on (Max) @ id, vgs | 60mOhm @ 17.6A, 15V |
| Gate charge (Qg) (Max) @ vgs | 63 nC @ 15 V |
| Input capacitance (Ciss) (Max) @ vds | 1621 pF @ 600 V |
C3M0045065D
[ALLOC] verified